Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy

Wang Yi^{1, 2}, Guo Xiang^{1, 2, 3}, Wei Jiemin², Yang Chen^{1, 3, 4}, Luo Zijiang^{1, 4}, Wang Jihong¹, Ding Zhao^{1, 2, 3, †}

r_c/r_Ga versus crystallization temperature with various arsenic pressures (9 μTorr; 5.6 μTorr; 3 μTorr) by Eq. (3).