In situ luminescence measurement of 6H-SiC at low temperature
Qiu Meng-Lin1, Yin Peng1, Wang Guang-Fu1, 2, †, Song Ji-Gao1, Luo Chang-Wei1, Wang Ting-Shun1, Zhao Guo-Qiang1, Lv Sha-Sha1, Zhang Feng-Shou1, 2, Liao Bin1
       

The evolutions of the 2.14 eV peak with fluence at five different temperatures: (a) 100 K, (b) 150 K, (c) 200 K, (d) 250 K, (e) 300 K.