In situ luminescence measurement of 6H-SiC at low temperature
Qiu Meng-Lin1, Yin Peng1, Wang Guang-Fu1, 2, †, Song Ji-Gao1, Luo Chang-Wei1, Wang Ting-Shun1, Zhao Guo-Qiang1, Lv Sha-Sha1, Zhang Feng-Shou1, 2, Liao Bin1
       

A typical Gaussian decomposition of IBIL spectrum of n-type 6H-SiC irradiated by 2 MeV H+ with a fluence of 5 × 1011 ion/cm2 at 150 K.