Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiO<italic>x</italic>:H) on 〈100〉- and 〈111〉-orientated c-Si wafers<xref rid="cpb_29_3_038801fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038801fn1"><label>*</label><p>Project supported by the National Key Research and Deveopment Program of China (Grant No. 2018YFB1500402), the National Natural Science Foundation of China (Grant Nos. 61674084 and 61874167), the Fundamental Research Funds for Central Universities, China, the Natural Science Foundation of Tianjin City, China (Grant No. 17JCYBJC41400), the Open Fund of the Key Laboratory of Optical Information Science & Technology of Ministry of Education of China (Grant No. 2017KFKT014), the 111 Project, China (Grant No. B16027), the International Cooperation Base, China (Grant No. 2016D01025), and Tianjin International Joint Research and Development Center, China.</p></fn>

Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide (a-SiOx:H) on 〈100〉- and 〈111〉-orientated c-Si wafers**

Project supported by the National Key Research and Deveopment Program of China (Grant No. 2018YFB1500402), the National Natural Science Foundation of China (Grant Nos. 61674084 and 61874167), the Fundamental Research Funds for Central Universities, China, the Natural Science Foundation of Tianjin City, China (Grant No. 17JCYBJC41400), the Open Fund of the Key Laboratory of Optical Information Science & Technology of Ministry of Education of China (Grant No. 2017KFKT014), the 111 Project, China (Grant No. B16027), the International Cooperation Base, China (Grant No. 2016D01025), and Tianjin International Joint Research and Development Center, China.

Chen Jun-Fan^{1, 2, 3, 4}, Zhao Sheng-Sheng^{1, 2, 3, 4}, Yan Ling-Ling^{1, 2, 3, 4}, Ren Hui-Zhi^{1, 2, 3, 4}, Han Can^{1, 2, 3, 4}, Zhang De-Kun^{1, 2, 3, 4}, Wei Chang-Chun^{1, 2, 3, 4}, Wang Guang-Cai^{1, 2, 3, 4, ‡}, Hou Guo-Fu^{1, 2, 3, 4, §}, Zhao Ying^{1, 2, 3, 4}, Zhang Xiao-Dan^{1, 2, 3, 4}

(a) H–O, Si–O, and C–O percentages in XPS of O 1s with different passivation layer thicknesses and (b) 9-nm-thick passivation layer deposited on the 〈100〉-orientated c-Si substrate.