Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs<xref rid="cpb_29_3_038505fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038505fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, and 61804003), the National Key Research and Development Program of China (Grant No. 2016YFA0202101), and the China Postdoctoral Science Foundation (Grant Nos. 2018M630034 and 2019T120017).</p></fn>

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs**

Project supported by the National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, and 61804003), the National Key Research and Development Program of China (Grant No. 2016YFA0202101), and the China Postdoctoral Science Foundation (Grant Nos. 2018M630034 and 2019T120017).

Zhang Xian-Le, Chang Peng-Ying^†, Du Gang, Liu Xiao-Yan^‡

Calculated hole mobility versus inversion density for 7 nm-thick-body (100)/[100] UTB SOI p-MOSFETs at 4.2 K, where N_itf = 3.75 × 10¹¹ cm⁻² and N_itb = 3.8 × 10¹¹ cm⁻² are adapted here. Δ = 0.4 nm and Λ = 1.6 nm are used for the SR scattering parameters.