Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs<xref rid="cpb_29_3_038505fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038505fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, and 61804003), the National Key Research and Development Program of China (Grant No. 2016YFA0202101), and the China Postdoctoral Science Foundation (Grant Nos. 2018M630034 and 2019T120017).</p></fn>

Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs**

Project supported by the National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, and 61804003), the National Key Research and Development Program of China (Grant No. 2016YFA0202101), and the China Postdoctoral Science Foundation (Grant Nos. 2018M630034 and 2019T120017).

Zhang Xian-Le, Chang Peng-Ying^†, Du Gang, Liu Xiao-Yan^‡

Calculated hole mobility versus inversion density at (a) 300 K and (b) 25 K for 7 nm-thick-body (100)/[100] UTB SOI p-MOSFETs. Symbols are for the measured hole mobilities.^[43] Δ = 0.4 nm and Λ = 1.6 nm are used for the SR scattering parameters. These results verify our simulation method and parameters listed in Table 1 for a wide range of temperatures in the UTB SOI devices.