Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs Project supported by the National Natural Science Foundation of China (Grant Nos. 61674008, 61421005, and 61804003), the National Key Research and Development Program of China (Grant No. 2016YFA0202101), and the China Postdoctoral Science Foundation (Grant Nos. 2018M630034 and 2019T120017). |
Calculated hole mobility (lines) versus inversion density at different temperatures: (a) 300 K, (b) 77 K, (c) 30 K. Symbols are for the measured hole mobility.[ |