A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector

Li Xuan-Zhang^{1, 2}, Sun Ling^{1, 2}, Lu Jin-Lei^{1, 2}, Liu Jie^{1, 2}, Yue Chen^{1, 2}, Xie Li-Li³, Wang Wen-Xin¹, Chen Hong^{1, 4}, Jia Hai-Qiang^{1, 4}, Wang Lu^{1, †}

X-ray diffraction pattern of InAs_0.91Sb_0.09/GaSb QWs and InAs_0.7Sb_0.3/AlSb/Al_0.3Ga_0.7Sb QWs: (a) the 10-nm InAs_0.91Sb_0.09 well in InAs_0.91Sb_0.09/GaSb QWs, (b) 15-nm InAs_0.91Sb_0.09 well in InAs_0.91Sb_0.09/GaSb QWs, (c) 10-nm InAs_0.7Sb_0.3 well in InAs_0.7Sb_0.3/AlSb/Al_0.3Ga_0.7Sb QWs.