A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector
Li Xuan-Zhang1, 2, Sun Ling1, 2, Lu Jin-Lei1, 2, Liu Jie1, 2, Yue Chen1, 2, Xie Li-Li3, Wang Wen-Xin1, Chen Hong1, 4, Jia Hai-Qiang1, 4, Wang Lu1, †
       

Band structure of a single QW embedded in GaSb bulk at 300K. The red arrows indicate the transition from the valence band of InAsSb (EV) to the first excited state (E1): (a) 5-nm-thick InAs0.45Sb0.55 QW, where the transition from the heavy hole valence band (Evh) to the first excited state (E1) of InAs0.45Sb0.55 is 0.44 eV, the response cut-off wavelength (λoff) is 2.82μm; (b) 10-nm-thick InAs0.91Sb0.09 QW, where the transition from the heavy hole valence band (Evh) to the first excited state (E1) is 0.39 eV (λoff = 3.16μm); (c) 15-nm-thick InAs0.91Sb0.09 QW, where the transition from the heavy hole valence band (Evh) to the first excited state (E1) is 0.35 eV (λoff = 3.54μm); (d) InAs0.70Sb0.30/AlSb/Al0.30Ga0.70Sb QW, where the transition from heavy hole valence band (Evh) to E1 is 0.39 eV (λoff = 3.16μm), the transition from light hole valence band (Evl) at 300 K is 0.48 eV (λoff = 2.59μm).