Numerical and analytical investigations for the SOI LDMOS with alternated high-<italic>k</italic> dielectric and step doped silicon pillars

Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

Yao Jia-Fei^{1, 2}, Guo Yu-Feng^{1, 2, †}, Zhang Zhen-Yu^{1, 2}, Yang Ke-Meng^{1, 2}, Zhang Mao-Lin^{1, 2}, Xia Tian³

Dependence of BV on n for the HKSD device (ɛ_D =100) and the SD device.