Numerical and analytical investigations for the SOI LDMOS with alternated high-<italic>k</italic> dielectric and step doped silicon pillars

Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars

Yao Jia-Fei^{1, 2}, Guo Yu-Feng^{1, 2, †}, Zhang Zhen-Yu^{1, 2}, Yang Ke-Meng^{1, 2}, Zhang Mao-Lin^{1, 2}, Xia Tian³

(a) Three-dimensional structure of the HKSD device and the schematic of doping concentration in silicon pillar. (b) The x--z cross-section of one basic unit of the HKSD device. (c) The Gaussian box of the i-th zone.