Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane<xref rid="cpb_29_3_038502fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038502fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256) and the Promotion Funding for Excellent Young Backbone Teacher of Henan Province, China (Grant No. 2019GGJS017).</p></fn>

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11775191, 61404115, 61434006, and 11475256) and the Promotion Funding for Excellent Young Backbone Teacher of Henan Province, China (Grant No. 2019GGJS017).

Zhong Ying-Hui¹, Yang Bo¹, Chang Ming-Ming¹, Ding Peng², Ma Liu-Hong¹, Li Meng-Ke¹, Duan Zhi-Yong¹, Yang Jie^{1, †}, Jin Zhi^{2, 3}, Wei Zhi-Chao³

Reduction rates of saturation output drain current for devices with single Si-doped plane and double Si-doped plane.