Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors<xref rid="cpb_29_3_038104fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038104fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).</p></fn>

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors**

Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).

Ma Liu-Hong^{1, 3}, Han Wei-Hua^{2, 3, †}, Yang Fu-Hua^{3, 4, ‡}

(a) Temperature effect on the gate voltage-dependent conductance. The source–drain voltage is 10 mV. The insert shows Arrhenius plots of the conductance in different temperature regions for D10 position. (b) The stability diagram of drain current at 6 K. (c) The contour diagram of the transconductance measured at 6 K.