Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors<xref rid="cpb_29_3_038104fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038104fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).</p></fn>

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors**

Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).

Ma Liu-Hong^{1, 3}, Han Wei-Hua^{2, 3, †}, Yang Fu-Hua^{3, 4, ‡}

(a) Drain current I_DS verses gate voltage V_GS and (b) the corresponding transconductance characteristics for different drain–source bias voltage V_DS ranging from 2 mV to 10 mV at 6 K. The Coulomb peaks appear in groups.