Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors<xref rid="cpb_29_3_038104fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038104fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).</p></fn>

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors**

Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).

Ma Liu-Hong^{1, 3}, Han Wei-Hua^{2, 3, †}, Yang Fu-Hua^{3, 4, ‡}

(a) Coulomb blockade I_DS–V_DS characteristics of JNT at 6 K for different V_GS. (b) The current–voltage characteristics of the heavily-doped Si film with Ni/Si contact measured at 6 K. All specimens exhibit near linear I–V characteristics, suggesting good ohmic conductor.