Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors<xref rid="cpb_29_3_038104fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038104fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).</p></fn>

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors**

Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).

Ma Liu-Hong^{1, 3}, Han Wei-Hua^{2, 3, †}, Yang Fu-Hua^{3, 4, ‡}

(a) Drain current I_DS in JNT as a function of the gate voltage V_GS at room temperature. (b) The transconductance g_m as a function of V_GS. The inset shows the corresponding I_DS/(g_m)^1/2 plot. (c) Temperature dependence of V_TH, V_FB, and μ₀.