Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors*

Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant Nos. 11947115, 61376096, 61327813, and 61404126).
Ma Liu-Hong1, 3, Han Wei-Hua2, 3, †, Yang Fu-Hua3, 4, ‡
       

(a) False color SEM image of device after the gate formation. The gate length is 280 nm and the channel has a cross section of 30 nm×35 nm. (b) A schematic diagram of the device structure, silicon nanowires are defined along the 〈110〉 direction. (c) Cross section schematics of the device, the SiO2 dielectric layer is 22 nm.