Comparison study of GaN films grown on porous and planar GaN templates<xref rid="cpb_29_3_038103fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038103fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404201), the State Key R&D Program of Jiangsu Province, China (Grant No. BE2019103), the Six-Talent Peaks Project of Jiangsu Province, China (Grant No. XCL-107), the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.</p></fn>

Comparison study of GaN films grown on porous and planar GaN templates**

Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404201), the State Key R&D Program of Jiangsu Province, China (Grant No. BE2019103), the Six-Talent Peaks Project of Jiangsu Province, China (Grant No. XCL-107), the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center, PAPD, and the Fund from the State Grid Shandong Electric Power Company.

Ding Shan, Li Yue-Wen, Xiu Xiang-Qian^†, Hua Xue-Mei, Xie Zi-Li, Tao Tao, Chen Peng, Liu Bin, Zhang Rong^‡,, Zheng You-Dou

Top SEM images of GaN grown on (a) porous GaN and (b) and MOCVD-GaN templates. Cross-sectional SEM images of GaN grown on (c) porous GaN and (d) MOCVD-GaN templates. Insets show the magnified view of the GaN/sapphire interfaces.