Low-temperature plasma enhanced atomic layer deposition of large area HfS<sub>2</sub> nanocrystal thin films<xref rid="cpb_29_3_038102fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038102fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).</p></fn>

Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).

Chang Ailing¹, Mao Yichen¹, Huang Zhiwei², Hong Haiyang¹, Xu Jianfang¹, Huang Wei¹, Chen Songyan¹, Li Cheng^{1, †}

XPS core-level spectra of the ALD-HfS₂ films prepared by 80 ALD cycles at (a)–(c) 150 °C, (d)–(f) 250 °C, (g)–(i) 350 °C, and (j)–(l) 450 °C: (a), (d), (g), (j) Hf 4f; (b), (e), (h), (k) S 2p; (c), (f), (i), (l) O 1s.