Low-temperature plasma enhanced atomic layer deposition of large area HfS<sub>2</sub> nanocrystal thin films<xref rid="cpb_29_3_038102fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038102fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).</p></fn>

Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).

Chang Ailing¹, Mao Yichen¹, Huang Zhiwei², Hong Haiyang¹, Xu Jianfang¹, Huang Wei¹, Chen Songyan¹, Li Cheng^{1, †}

Depth profile of elements in the HfS₂ film deposited on Si at temperature of 350 °C for 300 cycles.