Low-temperature plasma enhanced atomic layer deposition of large area HfS<sub>2</sub> nanocrystal thin films<xref rid="cpb_29_3_038102fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038102fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).</p></fn>

Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).

Chang Ailing¹, Mao Yichen¹, Huang Zhiwei², Hong Haiyang¹, Xu Jianfang¹, Huang Wei¹, Chen Songyan¹, Li Cheng^{1, †}

AFM images of the HfS₂ films deposited at 450 °C for (a) 80 cycles on Si; (b) 300 cycles on Si; (c) 80 cycles on sapphire; (d) 300 cycles on sapphire. (e) Grain size statistical distribution of the HfS₂ deposited for 80 cycles and 300 cycles on Si and sapphire.