Low-temperature plasma enhanced atomic layer deposition of large area HfS<sub>2</sub> nanocrystal thin films<xref rid="cpb_29_3_038102fn1" ref-type="fn">*</xref><fn id="cpb_29_3_038102fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).</p></fn>

Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103).

Chang Ailing¹, Mao Yichen¹, Huang Zhiwei², Hong Haiyang¹, Xu Jianfang¹, Huang Wei¹, Chen Songyan¹, Li Cheng^{1, †}

Optical images of the HfS₂ films deposited for 300 cycles on 300 nm SiO₂/Si, sapphire, and Si substrates. (a) Bare 300 nm SiO₂/Si; HfS₂ films deposited on SiO₂/Si at (b) 150 °C, (c) 250 °C, (d) 350 °C, (e) 450 °C; (f) bare sapphire; HfS₂ films deposited on sapphire at (g) 150 °C, (h) 250 °C, (i) 350 °C, (j) 450 °C; (k) bare Si; HfS₂ films deposited on Si at (l) 150 °C, (m) 250 °C, (n) 350 °C, (o) 450 °C.