Surface passivation in n-type silicon and its application in silicon drift detector<xref rid="cpb_29_3_037702fn1" ref-type="fn">*</xref><fn id="cpb_29_3_037702fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51602340, 51702355, and 61674167), the Natural Science Foundation of Beijing Municipality of China (Grant No. 4192064), the National Key Research Program of China (Grant Nos. 2018YFB1500500 and 2018YFB1500200), and the JKW Project of China (Grant No. 31512060106).</p></fn>

Surface passivation in n-type silicon and its application in silicon drift detector**

Project supported by the National Natural Science Foundation of China (Grant Nos. 51602340, 51702355, and 61674167), the Natural Science Foundation of Beijing Municipality of China (Grant No. 4192064), the National Key Research Program of China (Grant Nos. 2018YFB1500500 and 2018YFB1500200), and the JKW Project of China (Grant No. 31512060106).

Wu Yiqing^{1, 2}, Tao Ke^{2, †}, Jiang Shuai², Jia Rui^{2, ‡}, Huang Ye¹

Relationship between minority carrier lifetime and (a) first annealing temperature, (b) second annealing temperature.