Tailoring electronic properties of two-dimensional antimonene with isoelectronic counterparts
Zhang Ye1, Guo Huai-Hong1, †, Dong Bao-Juan2, 4, 5, ‡, Zhu Zhen3, §, Yang Teng2, ¶, Wang Ji-Zhang2, Zhang Zhi-Dong2
       

Electronic properties of (a) vertical vdW and (b) alloying SnTe/Sb heterstructures. (a) For β-SnTe/β-Sb vertical vdW heterstructure. The band gap size, CBM and VBM positions from both schematic band alignment analysis and calculation agree well. (b) For α-SnTe/α-Sb alloying (50% each), schematic band alignment analysis also agrees well with alloying band structure calculation.