Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles<xref rid="cpb_29_3_037304fn1" ref-type="fn">*</xref><fn id="cpb_29_3_037304fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 11574261) and the Natural Science Foundation of Hebei Province, China (Grant No. A2015203261).</p></fn>

Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles**

Project supported by the National Natural Science Foundation of China (Grant No. 11574261) and the Natural Science Foundation of Hebei Province, China (Grant No. A2015203261).

Li Ya-Lin, Gong Pei, Fang Xiao-Yong^†

Lattice structure of doped SiCNWs showing (a) cross section, (b) side of doped SiCNW, and (c) cross section of hydrogen passivation-doped SiCNWs, with d being the diameter of cross section of nanowire and X representing N, P, and As separately.