Defect engineering on the electronic and transport properties of one-dimensional armchair phosphorene nanoribbons<xref rid="cpb_29_3_037302fn1" ref-type="fn">*</xref><fn id="cpb_29_3_037302fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11574080 and 91833302).</p></fn>

Defect engineering on the electronic and transport properties of one-dimensional armchair phosphorene nanoribbons**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11574080 and 91833302).

Xu Huakai, Ouyang Gang^†

(a) The schematic illustration of a two-probe defective APNR device. (b) Transmission spectra under zero bias, (c) I–V curves of pristine and defective APNR with SV1 to SV5. (d) Bias-dependent transmission spectrum, (e) transmission eigenstates in the scattering region under bias of 1.4 V in perfect and SV1-APNR.