Defect engineering on the electronic and transport properties of one-dimensional armchair phosphorene nanoribbons<xref rid="cpb_29_3_037302fn1" ref-type="fn">*</xref><fn id="cpb_29_3_037302fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11574080 and 91833302).</p></fn>

Defect engineering on the electronic and transport properties of one-dimensional armchair phosphorene nanoribbons**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11574080 and 91833302).

Xu Huakai, Ouyang Gang^†

(a) Top and side views of an APNR with single vacancies at different positions, (b) formation energy and bandgap of the defective APNR. (c) Diffusion barrier for the migration of SV5 to SV1. (d) VBM, CBM and DL with respect to the Fermi level of the defective APNR. The Fermi level is set to zero.