High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation<xref rid="cpb_29_3_037301fn1" ref-type="fn">*</xref><fn id="cpb_29_3_037301fn1"><label>*</label><p>Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.</p></fn>

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation**

Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.

Liu Xin-Yu^{1, 2, ‡}, Hao Ji-Long^{1, 2}, You Nan-Nan^{1, 2}, Bai Yun^{1, 2}, Tang Yi-Dan^{1, 2}, Yang Cheng-Yue^{1, 2}, Wang Sheng-Kai^{1, 2, §}

Field effect mobility (μ_FE) as a function of the normalized electric field in 4H-SiC MOSFETs with different gate oxides subjected to plasma oxidation, thermal oxidation, nitridations (NO) or wet annealing treatments.