High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation<xref rid="cpb_29_3_037301fn1" ref-type="fn">*</xref><fn id="cpb_29_3_037301fn1"><label>*</label><p>Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.</p></fn>

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation**

Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.

Liu Xin-Yu^{1, 2, ‡}, Hao Ji-Long^{1, 2}, You Nan-Nan^{1, 2}, Bai Yun^{1, 2}, Tang Yi-Dan^{1, 2}, Yang Cheng-Yue^{1, 2}, Wang Sheng-Kai^{1, 2, §}

(a) The R_s determined by the extrapolation of high frequency limit of the real part of impedance measured in accumulation region. (b) Frequency dependence of G_p/ω measured at 100 K. (c) The D_it as a function of energy level below the conduction band, estimated from the peak values of G_p/ω measured at the temperature from 50 K to 200 K and the NO annealed thermal oxidized sample is the reference group. (d) The D_it of the sample oxidized by plasma oxidation compared with the other oxidation method in previous reports, as a function of energy level of 0.2 eV below the 4H-SiC conduction band edge.