High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation<xref rid="cpb_29_3_037301fn1" ref-type="fn">*</xref><fn id="cpb_29_3_037301fn1"><label>*</label><p>Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.</p></fn>

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation**

Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.

Liu Xin-Yu^{1, 2, ‡}, Hao Ji-Long^{1, 2}, You Nan-Nan^{1, 2}, Bai Yun^{1, 2}, Tang Yi-Dan^{1, 2}, Yang Cheng-Yue^{1, 2}, Wang Sheng-Kai^{1, 2, §}

(a) Multi-frequency bidirectional C–V curves of the MOS capacitors fabricated by plasma oxidation with pressure of 6 kPa and power of 1000 W and 1300-°C thermal oxidation with NO annealing measured at 100 K and 300 K. (b) The C_ox of 1000-W plasma oxidized MOS capacitor is determined by the extrapolation of high frequency capacitance in accumulation region.