High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation<xref rid="cpb_29_3_037301fn1" ref-type="fn">*</xref><fn id="cpb_29_3_037301fn1"><label>*</label><p>Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.</p></fn>

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation**

Project supported in part by the National Key Research and Development Program of China (Grant No. 2016YFB0100601), the National Natural Science Foundation of China (Grant Nos. 61674169 and 61974159), and the Support from a Grant-In-Aid from the Youth Innovation Promotion Association of the Chinese Academy of Sciences.

Liu Xin-Yu^{1, 2, ‡}, Hao Ji-Long^{1, 2}, You Nan-Nan^{1, 2}, Bai Yun^{1, 2}, Tang Yi-Dan^{1, 2}, Yang Cheng-Yue^{1, 2}, Wang Sheng-Kai^{1, 2, §}

(a) Schematic diagram of microwave plasma oxidation equipment. 2.45-GHz microwave generated by a magnetron is guided through the waveguide to the quartz discharge tube filled with pure oxygen gas. A plasma hemisphere with a diameter of 2.5 cm was well confined and located at the center of the chamber, as depicted in the inset. (b) SiC surface temperature as a function of O₂ pressure and plasma power. (c) OES of plasma under various chamber pressures by fixing the power at 500 W.