Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN Project supported by the National Key Research and Development Program, China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant No. 2019B010128002), the National Natural Science Foundation of China (Grant No. U1601210), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011). |
(a) Plots of weak |
![]() |