Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN<sub><italic>x</italic></sub> gate dielectric<xref rid="cpb_29_3_037201fn1" ref-type="fn">*</xref><fn id="cpb_29_3_037201fn1"><label>*</label><p>Project supported by the National Key Research and Development Program, China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant No. 2019B010128002), the National Natural Science Foundation of China (Grant No. U1601210), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).</p></fn>

Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric**

Project supported by the National Key Research and Development Program, China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant No. 2019B010128002), the National Natural Science Foundation of China (Grant No. U1601210), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

Que Tao-Tao¹, Zhao Ya-Wen¹, Li Liu-An¹, He Liang², Qiu Qiu-Ling¹, Liu Zhen-Xing¹, Zhang Jin-Wei¹, Chen Jia¹, Wu Zhi-Sheng¹, Liu Yang^{1, †}

(a) Transfer characteristics after a pretretment under V_g = −1.5 V, V_s = V_d = 0 V, 1000 s. (b) Before PBTI tests, an extrapolated lifetime of TDDB versus gate bias shows that the gate voltage on the curve of TDDB scale factor (η) of 63.2% at 10 years is about 15 V.