Single crystal growth, structural and transport properties of bad metal RhSb<sub>2</sub><xref rid="cpb_29_3_037101fn1" ref-type="fn">*</xref><fn id="cpb_29_3_037101fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11674375, 11634015, 11925408, and 11674369), the National Basic Research Program of China (Grant Nos. 2016YFA0300600, 2016YFA030240, 2017YFA0302901, and 2018YFA0305700), the Strategic Priority Research Program and Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant Nos. QYZDB-SSW-SLH013, XDB28000000, and XXH13506-202), the Science Challenge Project of China (Grant No. TZ2016004), the K. C. Wong Education Foundation, China (Grant No. GJTD-2018-01), the Beijing Natural Science Foundation, China (Grant No. Z180008), and the Beijing Municipal Science and Technology Commission, China (Grant No. Z181100004218001).</p></fn>

Single crystal growth, structural and transport properties of bad metal RhSb₂**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11674375, 11634015, 11925408, and 11674369), the National Basic Research Program of China (Grant Nos. 2016YFA0300600, 2016YFA030240, 2017YFA0302901, and 2018YFA0305700), the Strategic Priority Research Program and Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant Nos. QYZDB-SSW-SLH013, XDB28000000, and XXH13506-202), the Science Challenge Project of China (Grant No. TZ2016004), the K. C. Wong Education Foundation, China (Grant No. GJTD-2018-01), the Beijing Natural Science Foundation, China (Grant No. Z180008), and the Beijing Municipal Science and Technology Commission, China (Grant No. Z181100004218001).

Wu D S^{1, 2}, Qian Y T^{1, 2}, Liu Z Y^{1, 2}, Wu W¹, Li Y J^{1, 2}, Na S H^{1, 2}, Shao Y T^{1, 2}, Zheng P^{1, 2}, Li G^{1, 2, 3}, Cheng J G^{1, 2, 3}, Weng H M^{1, 2, 3}, Luo J L^{1, 2, 3, †}

(a) ρ_xx and ρ_xy of RhSb₂ single crystal at 2 K with applying magnetic field along [011] direction, (b) MR measured at different temperatures with fields along the [011] axis. (c) The Hall resistivity vs. magnetic field B at different temperatures of 2 K, 25 K, 40 K, 100 K, 150 K, 240 K, 300 K. (d) The concentration of carriers is obtained by fitting the Hall conductivity with a single-band model.