Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift<xref rid="cpb_29_3_034206fn1" ref-type="fn">*</xref><fn id="cpb_29_3_034206fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801) and the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, and 61574134).</p></fn>

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400803 and 2016YFB0401801) and the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, and 61574134).

Chen Ping^{1, 2}, Zhao De-Gang^{1, 2, †}, Jiang De-Sheng¹, Yang Jing¹, Zhu Jian-Jun^{1, 2}, Liu Zong-Shun¹, Liu Wei¹, Liang Feng¹, Liu Shuang-Tao¹, Xing Yao¹, Zhang Li-Qun³

EL spectra shift of samples A–C under different injection current levels.