Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor
Liu Xian-Cheng
1
, Ma Jia-Jun
1
, Xie Hong-Yun
1, †
, Ma Pei
1
, Chen Liang
2
, Guo Min
1
, Zhang Wan-Rong
1
Curve of
f
β
,opt
collector current for SOI-based SiGe HPT and for Si-based SiGe HPT.