Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor
Liu Xian-Cheng1, Ma Jia-Jun1, Xie Hong-Yun1, †, Ma Pei1, Chen Liang2, Guo Min1, Zhang Wan-Rong1
       

Device structures of SiGe HPT. (a) SOI-based and (b) Si-based.