A numerical study on pattern selection in crystal growth by using anisotropic lattice Boltzmann-phase field method
Zhang Zhaodong1, Cao Yuting1, Sun Dongke1, †, Xing Hui2, ‡, Wang Jincheng3, Ni Zhonghua1, §
       

Interface curvature distribution for crystal growth in the pure conductive condition at time (a) t = 2560τ0, (b) t = 1280τ0, (c) t = 640τ0, (d) t = 320τ0 with d0 = 0.185, ε = 0.01, and various initial temperatures (a) T^0=0.60 , (b) T^0=0.70 , (c) T^0=0.80 , (d) T^0=0.90 .