A numerical study on pattern selection in crystal growth by using anisotropic lattice Boltzmann-phase field method |
Interface curvature distribution for crystal growth in the pure conductive condition at time (a) t = 2560τ0, (b) t = 1280τ0, (c) t = 640τ0, (d) t = 320τ0 with d0 = 0.185, ε = 0.01, and various initial temperatures (a) |
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