A numerical study on pattern selection in crystal growth by using anisotropic lattice Boltzmann-phase field method

Zhang Zhaodong¹, Cao Yuting¹, Sun Dongke^{1, †}, Xing Hui^{2, ‡}, Wang Jincheng³, Ni Zhonghua^{1, §}

Interface curvature distribution for crystal growth in the pure conductive condition at time (a) t = 2560τ₀, (b) t = 1280τ₀, (c) t = 640τ₀, (d) t = 320τ₀ with d₀ = 0.185, ε = 0.01, and various initial temperatures (a) T^0=−0.60 , (b) T^0=−0.70 , (c) T^0=−0.80 , (d) T^0=−0.90 .