Atomically flat surface preparation for surface-sensitive technologies
Tang Cen-Yao1, 2, Rao Zhi-Cheng1, 2, Yuan Qian-Qian3, 4, Tian Shang-Jie5, Li Hang1, 2, Huang Yao-Bo6, Lei He-Chang5, Li Shao-Chun3, 4, Qian Tian1, 7, Sun Yu-Jie1, 7, ‡, Ding Hong1, 7
       

(a) Grind-polish-sputter-anneal process, (b) sketch map of Ar+ ion sputtering bombard, (001) surface of CoSi after grinding and polishing, with magnification of 50 × (c) and 1000 × (d).