Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height
Wang Zhong-Xu1, Du Lin2, Liu Jun-Wei1, Wang Ying3, Jiang Yun2, Ji Si-Wei2, Dong Shi-Wei3, Chen Wei-Wei3, Tan Xiao-Hong4, Li Jin-Long4, Li Xiao-Jun3, Zhao Sheng-Lei1, †, Zhang Jin-Cheng1, †, Hao Yue1
       

Off-state ID–VDS curves of Al0.7Ga0.3N/Al0.4Ga0.6N HEMTs with h = 0.8 μm, t = 1.0 μm and h = 1.6 μm, t = 2.0 μm. LGD = 7 μm, εr = 28.