Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

Wang Zhong-Xu¹, Du Lin², Liu Jun-Wei¹, Wang Ying³, Jiang Yun², Ji Si-Wei², Dong Shi-Wei³, Chen Wei-Wei³, Tan Xiao-Hong⁴, Li Jin-Long⁴, Li Xiao-Jun³, Zhao Sheng-Lei^{1, †}, Zhang Jin-Cheng^{1, †}, Hao Yue¹

(a) Off-state I_D–V_DS curves and (b) electric-field distribution as a function of L_GD for GaN channel HEMTs with t = 1.0 μm and h = 0.8 μm. Characteristics for the HEMT with L_GD = 7 μm, t = 2.0 μm, and h = 1.6 μm are also drawn.