Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height
Wang Zhong-Xu1, Du Lin2, Liu Jun-Wei1, Wang Ying3, Jiang Yun2, Ji Si-Wei2, Dong Shi-Wei3, Chen Wei-Wei3, Tan Xiao-Hong4, Li Jin-Long4, Li Xiao-Jun3, Zhao Sheng-Lei1, †, Zhang Jin-Cheng1, †, Hao Yue1
       

Off-state ID–VDS curves for GaN channel HEMTs with various relative permittivities.