Simulation of GaN micro-structured neutron detectors for improving electrical properties
Geng Xin-Lei
1
, Xia Xiao-Chuan
1, †
, Huang Huo-Lin
2
, Sun Zhong-Hao
1
, Zhang He-Qiu
1
, Cui Xing-Zhu
3
, Liang Xiao-Hua
3
, Liang Hong-Wei
1, ‡
Electric field distribution for GaN-MSND with Al
2
O
3
at
V
r
of 270 V.