Simulation of GaN micro-structured neutron detectors for improving electrical properties
Geng Xin-Lei1, Xia Xiao-Chuan1, †, Huang Huo-Lin2, Sun Zhong-Hao1, Zhang He-Qiu1, Cui Xing-Zhu3, Liang Xiao-Hua3, Liang Hong-Wei1, ‡
       

Electric field distribution for GaN-MSND with Al2O3 at Vr of 270 V.