Simulation of GaN micro-structured neutron detectors for improving electrical properties
Geng Xin-Lei1, Xia Xiao-Chuan1, †, Huang Huo-Lin2, Sun Zhong-Hao1, Zhang He-Qiu1, Cui Xing-Zhu3, Liang Xiao-Hua3, Liang Hong-Wei1, ‡
       

Reverse characteristics of GaN-MSND with SiO2 with a positive fixed charge density of 3 × 1011 cm−2 on GaN/SiO2 interface and with Al2O3 with a negative fixed charge density of 2 × 1012 cm−2 on GaN/Al2O3 interface.