Simulation of GaN micro-structured neutron detectors for improving electrical properties
Geng Xin-Lei1, Xia Xiao-Chuan1, †, Huang Huo-Lin2, Sun Zhong-Hao1, Zhang He-Qiu1, Cui Xing-Zhu3, Liang Xiao-Hua3, Liang Hong-Wei1, ‡
       

Profiles of electric field versus x for GaN-MSND for d values of 0.5 μm, 1.5 μm, and 2.5 μm at the depth of respective trench bottom when the reverse voltage is 60 V.