Simulation of GaN micro-structured neutron detectors for improving electrical properties

Geng Xin-Lei¹, Xia Xiao-Chuan^{1, †}, Huang Huo-Lin², Sun Zhong-Hao¹, Zhang He-Qiu¹, Cui Xing-Zhu³, Liang Xiao-Hua³, Liang Hong-Wei^{1, ‡}

(a) Reverse characteristics of GaN-MSND versus voltage for various d values, and (b) W and V_r extracted from the simulation results versus d.