Simulation of GaN micro-structured neutron detectors for improving electrical properties
Geng Xin-Lei1, Xia Xiao-Chuan1, †, Huang Huo-Lin2, Sun Zhong-Hao1, Zhang He-Qiu1, Cui Xing-Zhu3, Liang Xiao-Hua3, Liang Hong-Wei1, ‡
       

(a) Electric field distribution in GaN-MSND at Vr = 150 V, and (b) electric field profile of GaN-MSND extracted along vertical direction (x-cut).