Simulation of GaN micro-structured neutron detectors for improving electrical properties
Geng Xin-Lei1, Xia Xiao-Chuan1, †, Huang Huo-Lin2, Sun Zhong-Hao1, Zhang He-Qiu1, Cui Xing-Zhu3, Liang Xiao-Hua3, Liang Hong-Wei1, ‡
       

Reverse characteristic of GaN-MSND with trapezoidal p-type inversion region of which Np is 1 × 1017 cm−3, with the inset showing its potential distribution at reverse voltage of 1342 V.