Simulation of GaN micro-structured neutron detectors for improving electrical properties
Geng Xin-Lei1, Xia Xiao-Chuan1, †, Huang Huo-Lin2, Sun Zhong-Hao1, Zhang He-Qiu1, Cui Xing-Zhu3, Liang Xiao-Hua3, Liang Hong-Wei1, ‡
       

(a) Potential distribution for GaN-MSND with Np of 1 × 1017 cm−3 at reverse voltage of 1000 V, and (b) electric field profile for GaN-MSND with d of 0.5 μm and Np of 3 × 1016 cm−3 at x = 32.5 μm when reverse voltage is 200 V. The inset shows the main junction electric field varying with Np at reverse voltage of 200 V for GaN-MSND.