Simulation of GaN micro-structured neutron detectors for improving electrical properties
Geng Xin-Lei1, Xia Xiao-Chuan1, †, Huang Huo-Lin2, Sun Zhong-Hao1, Zhang He-Qiu1, Cui Xing-Zhu3, Liang Xiao-Hua3, Liang Hong-Wei1, ‡
       

(a) Reverse characteristics of GaN-MSND with Np of 1 × 1016 cm−3, 3 × 1016 cm−3, 5 × 1016 cm−3, 7 × 1016 cm−3, 9 × 1016 cm−3, and 1 × 1017 cm−3 and (b) relationship between Vr and Np, and W and Np for GaN-MSND with p-type inversion region.